View IRF6811SPBF_7770134.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www.irf.com 1 01/28/11 fig 1. typical on-resistance vs. gate voltage fig 2. typical total gate charge vs gate-to-source voltage click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.28mh, r g = 50 ? , i as = 15a. IRF6811SPBF irf6811strpbf directfet ? power mosfet

sq sx st mq mx mt mp description the irf6811strpbf combines the latest hexfet ? power mosfet silicon technology with the advanced directfet ? packaging to achieve improved performance in a package that has the footprint of a micro-8 and only 0.7 mm profile. the directfet ? package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection solderin g tech- niques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfet ? package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the irf6811strpbf has low gate resistance and low charge along with ultra low package inductance providing significant reductio n in switching losses. the reduced losses make this product ideal for high efficiency dc-dc converters that power the latest generat ion of processors operating at higher frequencies. the irf6811strpbf has been optimized for the control fet socket of synchronous buc k operating from 12 volt bus converters. rohs compliant and halogen free low profile (<0.7 mm) dual sided cooling compatible ultra low package inductance optimized for high frequency switching ideal for cpu core dc-dc converters optimized for control fet application compatible with existing surface mount techniques 100% rg tested footprint compatible to directfet isometric 0 5 10 15 20 25 30 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v v ds = 5.0v i d = 15a v dss v gs r ds(on) r ds(on) 25v max 16v max 2.8m ? @ 10v 4.1m ? @ 4.5v q g tot q gd q gs2 q rr q oss v gs(th) 11nc 4.2nc 1.4nc 23nc 11nc 1.6v absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a max. 15 74 150 16 25 19 32 15 v a 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 v gs, gate -to -source voltage (v) 0 2 4 6 8 10 12 t y p i c a l r d s ( o n ) ( m ? ) i d = 19a t j = 25c t j = 125c d g d s free datasheet http:///
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle 2%. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 25 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 22 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 2.8 3.7 ??? 4.1 5.4 v gs(th) gate threshold voltage 1.1 1.6 2.1 v v ds = v gs , i d = 35a ? v gs ( th ) / ? t j gate threshold voltage coefficient ??? -6.2 ??? mv/c v ds = v gs , i d = 25a i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 180 ??? ??? s q g total gate charge ??? 11 17 q gs1 pre-vth gate-to-source charge ??? 2.2 ??? q gs2 post-vth gate-to-source charge ??? 1.4 ??? q gd gate-to-drain charge ??? 4.2 ??? q godr gate charge overdrive ??? 3.2 ??? see fig. 2 & 15 q sw switch charge (q gs2 + q gd ) ??? 5.6 ??? q oss output charge ??? 11 ??? nc r g gate resistance ??? 0.4 ??? ? t d(on) turn-on delay time ??? 8.7 ??? t r rise time ??? 19 ??? t d(off) turn-off delay time ??? 11 ??? t f fall time ??? 5.5 ??? c iss input capacitance ??? 1590 ??? c oss output capacitance ??? 460 ??? pf c rss reverse transfer capacitance ??? 110 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 18 27 ns q rr reverse recovery charge ??? 23 35 nc a ns ??? ??? ??? ??? 40 150 m ? nc v gs = 4.5v, i d = 15a v gs = 4.5v i d = 15a v gs = 16v v gs = -16v v ds = 20v, v gs = 0v v ds = 13v v ds = 13v i d = 15a v dd = 13v, v gs = 4.5v di/dt = 300a/s t j = 25c, i s = 15a, v gs = 0v showing the integral reverse p-n junction diode. t j = 25c, i f = 15a conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 19a v ds = 20v, v gs = 0v, t j = 125c mosfet symbol r g = 1.5 ? v ds = 13v, i d = 15a conditions see fig. 17 ? = 1.0mhz v ds = 16v, v gs = 0v v gs = 0v free datasheet http:///
www.irf.com 3 fig 3. maximum effective transient thermal impedance, junction-to-ambient used double sided cooling, mounting pad with large heatsink. mounted on minimum footprint full size board with metalized back and with small clip heatsink.
r is measured at
surface mounted on 1 in. square cu (still air).
with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 21.298 2.002815 24.844 0.296144 3.3632 0.000886 10.411 0.027621 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri a a 4 4 r 4 r 4 absolute maximum ratin g s parameter units p d @t a = 25c power dissipation p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 60 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 3.9 r j-pcb junction-to-pcb mounted 1.0 ??? linear derating factor w/c w c 0.017 270 -40 to + 150 max. 32 2.1 1.3 free datasheet http:///
4 www.irf.com fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs.drain-to-source voltage fig 9. typical on-resistance vs. drain current and gate voltage 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.8v bottom 2.5v 60s pulse width tj = 25c 2.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.8v bottom 2.5v 1 2 3 4 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v ds = 15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) i d = 19a v gs = 10v v gs = 4.5v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 140 160 i d , drain current (a) 0 5 10 15 20 25 30 35 40 45 t y p i c a l r d s ( o n ) ( m ? ) t j = 25c vgs = 3.5v vgs = 4.0v vgs = 4.5v vgs = 5.0v vgs = 10v free datasheet http:///
www.irf.com 5 fig 13. typical threshold voltage vs. junction temperature fig 12. maximum drain current vs. case temperature fig 10. typical source-drain diode forward voltage fig11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd , source-to-drain voltage (v) 0 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 80 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 t y p i c a l v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a i d = 250a i d = 1.0ma i d = 1.0a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.4a 2.2a bottom 15a 0.01 0.10 1.00 10.00 100.00 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c t j = 150c single pulse 100sec 1msec 10msec dc free datasheet http:///
6 www.irf.com fig 15a. gate charge test circuit fig 15b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 16a. unclamped inductive test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. switching time test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 1k vcc dut 0 l
1 0.1 %
+ - free datasheet http:///
www.irf.com 7 fig 18. for n-channel hexfet power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
? ? ? ? ! " # ? $ % &'&& ? " (( ? &'&& ) $ ' + - + + + - - -
?

!"#$% & ' ' ( )* & + ( )) & * ' + d d d d g=gate d=drain s=source gs free datasheet http:///
8 www.irf.com ?

! " note: for the most current drawing please refer to ir website at http://www .irf.com/package ?

!"#$% & ' ' ( )* & + ( )) & * ' + gate marking part number logo batch number date code line above the last character of the date code indicates "lead-free" code a b c d e f g h j k l m r p imperial min 4.75 3.70 2.75 0.35 0.48 0.78 0.88 0.78 n/a 0.93 2.00 0.535 0.020 0.08 max 4.85 3.95 2.85 0.45 0.52 0.82 0.92 0.82 n/a 0.97 2.10 0.595 0.080 0.17 min 0.187 0.146 0.108 0.014 0.019 0.031 0.035 0.031 n/a 0.037 0.079 0.021 0.0008 0.003 metric dimensions max 0.191 0.156 0.112 0.018 0.020 0.032 0.036 0.032 n/a 0.038 0.083 0.023 0.0031 0.007 free datasheet http:///
www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/2011 ?

#
$

%&

note: for the most current drawing please refer to ir website at http://www .irf.com/package reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6811strpbf). for 1000 parts on 7" reel, order irf6811str1pbf b c max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 imperial h min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 standard option (qty 4800) code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 metric g e f min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 tr1 option (qty 1000) max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c imperial a d loaded tape feed direction a e note: controlling dimensions in mm code a b c d e f g h f b c imperial min 0.311 0.154 0.469 0.215 0.158 0.197 0.059 0.059 max 8.10 4.10 12.30 5.55 4.20 5.20 n.c 1.60 min 7.90 3.90 11.90 5.45 4.00 5.00 1.50 1.50 metric dimensions max 0.319 0.161 0.484 0.219 0.165 0.205 n.c 0.063 d h g free datasheet http:///

▲Up To Search▲

Price & Availability of IRF6811SPBF

	To Download IRF6811SPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .